学术报告:The progress on novel oxide-based electronic
时间: 2015-07-25  作者:   浏览次数: 65
报告题目: The progress on novel oxide-based electronic devices
报 告 人:曹鸿涛 研究员   中国科学院宁波材料技术与工程研究所
报告时间:2015年4月28日上午9点
报告地点:物理科技楼101
报告人简历:Hongtao Cao is currently a professor at Ningbo Institute of Material Technology & Engineering (NIMTE), Chinese Academy of Sciences. He received his BS. and PhD at Northeastern University in 1998 and Institute of Metal Research in 2004, respectively. Then he had worked at Royal Institute of Technology, Sweden, as a Postdoctoral Research Fellow ranging from 2004 to 2007. In March 2007, He joined NIMTE as a professor. The members of Cao’s group are committed in fundamental research focusing on exploring and understanding thin films of oxide semiconductors & dielectrics, constructing oxide-based hetero- or homo-structures, developing novel electronic devices, energy-efficiency-related modules, and prospective optoelectronic devices. He has published more than 40 peer-reviewed scientific papers on Phys. Rev. B., Appl. Phys. Lett., ACS Appl. Mater. Interfaces, etc., and held several patents. The ongoing research is supported by 973, NSFC, local government sponsored projects, and industry collaboration partners.